200 mm  polished wafer

Growth Method

CZ

Diameter (mm)

200.0 ± 0.2

Type / Dopant

P type / boron
N type / P

Crystal Orientation

<100> / <111>

Resistivity (¦¸.cm)

0.1 - 50

Radial Resistivity Variation (%)

P Type < 5
N Type < 15

[ Oi ] (ppma)

5.0-7.8 × 10ⁿ ± 0.5

Radial Oxygen Variation (%)

< 5

Carbon Content (at cm^-3 )

<= 2.0×10¹⁶

Fe Content (at cm^-3  )

(Fe) <= 5.0×10¹⁰

Surface Metal (at cm^-2 )

Cu / Cr / Fe / Ni <= 2.5×10¹⁰
Al / Zn / Ka / Na / Ca <= 1.0×10¹¹

Thickness (um)

SEMI Standard or Customized

Thickness Tolerances (um)

± 15

TTV (um)

< 3.0

TIR (um)

< 2.0

STIRmax (um)

< 0.3

Warp (um)

< 20

Particle (# per wafer)

< 30 (for size > 0.15 um)

150 mm polished wafer

Growth Method

CZ

Diameter (mm)

150.0 ± 0.2

Type / Dopant

P type / boron
N type /P As Sb

Crystal Orientation

<100> / <111>

Resistivity (¦¸.cm)

0.003-50

Radial Resistivity Variation (%)

P Type < 6
N Type < 25

[ Oi ] (ppma) (at cm^-3 )

5.0-7.8×10¹⁰ ± 0.5

Radial Oxygen Variation (%)

< 5

Carbon Content (at cm^-3 )

<= 2.0×10¹⁶

Fe Content (at cm^-3 )

<= 1.0×10¹¹

Surface Metal (at cm^-2 )

Cu / Cr / Fe / Ni <= 5.0×10¹⁰
Al / Zn / Ka / Na / Ca <= 2.0×10¹¹

Thickness (um)

 SEMI Standard or Customized

Thickness Tolerances (um)

± 15

TTV (um)

< 2.5

TIR (um)

< 1.2

STIRmax (um)

< 0.3

Warp (um)

< 30

Particle(# per wafer)

< 30 (for size > 0.2 um)